? 2011 ixys all rights reserved 1 - 6 20110321a vwm 270-0075x2 v dss = 75 v i d25 = 270 a r ds(on) = 2.1 m three phase full bridge with trench mosfets mosfet t1 - t6 symbol conditions maximum ratings v dss t vj = 25c to 150c 75 v v gs 20 v i d25 i d80 t c = 25c t c = 80c 270 215 a a i f25 i f80 t c = 25c (diode) t c = 80c (diode) 280 180 a a applications ac drives ? in automobiles - electr ic power steering - star ter generator ? in industr ial vehicles - propulsion dr ives - f ork lift drives ? in batter y supplied equipment features ? mosfets in trench technology: - lo w r dson - optimiz ed intrinsic reverse diode ? pac kage: - high le vel of integration - solder ter minals for pcb mounting - isolated dcb cer amic base plate with optimiz ed heat transfer l1 l2 l3 l+ g1 s1 g2 s2 l- g3 s3 g4 s4 g5 s5 g6 s6 t1 t2 t3 t4 t5 t6 symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson 1) v gs = 10 v; i d = 100 a; on chip level 2.1 m w v gs(th) v ds = 20 v; i d = 0.5 ma 2 4 v i dss v ds = 75 v; v gs = 0 v t vj = 25c t vj = 125c 10 300 a a i gss v gs = 20 v; v ds = 0 v 0.4 a q g q gs q gd v gs = 10 v; v ds = ?v dss ; i d = 230 a 360 105 80 nc nc nc t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 37 v i d = 230 a; r g = 10 t vj = 25c r g = r g ext + r out driver 140 225 380 265 0.23 3.49 0.04 ns ns ns ns mj mj mj t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 37 v i d = 230 a; r g = 10 t vj = 125c r g = r g ext + r out driver 145 240 410 230 0.3 2.95 0.06 ns ns ns ns mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 0.66 0.44 k/w k/w 1) v ds = i d (r ds(on) + 2r pin to chip ) p h a s e - o u t
? 2011 ixys all rights reserved 2 - 6 20110321a vwm 270-0075x2 module symbol conditions maximum ratings t vj t stg -40...+175 -40...+125 c c v isol i isol < 1 ma, 50/60 hz; t = 1 min 500 v~ m d mounting torque (m5) 2 - 2.5 nm source-drain diode symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v sd i f = 100 a; v gs = 0 v 1.1 v t rr q rm i rm i f = 230 a; v r = 37 v -di f /dt = 820 a/s: r g = 10 85 2.2 38 ns c a symbol conditions characteristic values min. typ. max. r pin to chip 1) 0.7 m w weight 80 g 1) v ds = i d (r ds(on) + 2r pin to chip ) p h a s e - o u t
? 2011 ixys all rights reserved 3 - 6 20110321a vwm 270-0075x2 65 93 0.25 z 2 13 17 0.25 38 40.4 +0.3 y 4.5 0.5 m m a a 6 9 10 8 7 3 4 5 2 1 b c e d f i h g k l b c e d f i h g k l 6 n o s r p 9 10 v u t w 8 7 n o r p s 3 v t u 4 5 w 2 1 0.5 80 0.3 32 0.2 78.5 0.3 40 0.15 dx2 dy2 4x45 5.5 r dx1 x 0.8 dy1 r y 0.8 r1 0.50.2 ?1.5 (din 46 431) 1.5 +0.6-0.3 m 5:1 detail y 6.0 1.5 m 2:1 (4) ? 2.1 ? 6.1 ? 2.5 detail z dimensions in mm (1 mm = 0.0394) p h a s e - o u t
? 2011 ixys all rights reserved 4 - 6 20110321a vwm 270-0075x2 v ds [v] 0.0 0.5 1.0 1.5 2.0 i d [a] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 0 100 200 300 400 500 -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 1 2 3 4 0 100 200 300 400 500 7 v 6 v 5 v 5 v 6 v 5 v 7 v t j = 25c v ds [v] i d [a] t j [c] r dson norm. 7 v 8 v 8 v i d [a] v ds [v] 6 v 8 v i d [a] 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs [v] 0 50 100 150 200 250 300 v gs = 15/10/9 v t j = 150c v gs = 15/10/9 v v gs = 10 v t j = 150c 25c -40c t j = 25c i d = 460 a i d = 230 a v gs = 15/10/9 v q g [nc] 0 100 200 300 400 v gs [v] 0 1 2 3 4 5 6 7 8 9 10 v ds = 38 v i d = 230 a i g = 10 ma fig. 1 t yp. output characteristics fig. 2 t yp. extended output characteristics fig. 3 typ. output characteristics fig. 4 r ds(on) normalized to i d = 230 a v alue vs. junction temperature fig. 5 t yp. transfer characteristics fig. 6 t yp. turn-on gate charge p h a s e - o u t
? 2011 ixys all rights reserved 5 - 6 20110321a vwm 270-0075x2 4 8 12 16 20 24 0 2 4 6 8 10 0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 t vj [c] v ds [v] 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 0 20 40 60 80 100 120 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 0 100 200 300 400 500 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 600 0 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 0 100 200 300 400 500 e on t r i rr [a] di f /dt [a/s] e on [mj] i d [a] t d(on) e off [mj] t [ns] t [ns] i d [a] e off t f t d(off) e on , e rec [mj] r g [ ] t [ns] e on t r 10x e rec ( off) t d(on) e off [mj] r g [ ] t [ns] e off t f t d(off) e rec(off) x10 r g = 10 v ds = 37 v v gs = 10/0 v t vj = 125c r g = 10 v ds = 37 v v gs = 10/0 v t vj = 125c i d = 230 a v ds = 37 v v gs = 0/10 v t vj = 125c i d = 230 a v ds = 37 v v gs = 0/10 v t vj = 125c i dss = 0.5 ma normalized t rr [ns] t rr i rr 47 22 10 4.7 fig. 7 t yp. drain source breakdown voltage v dss versus junction temperature fig. 8 t yp. reverse recovery time and current of the body diode v ersus di f /dt fig. 9 t yp. turn-on energy & switching times vs . drain current, inductive switching fig. 10 t yp. turn-off energy & switching times vs . drain current, inductive switching fig. 11 t yp. turn-on energy & switching times vs . gate resistor, inductive switching fig. 12 t yp. turn-off energy & switching times vs . gate resistor, inductive switching p h a s e - o u t
? 2011 ixys all rights reserved 6 - 6 20110321a vwm 270-0075x2 v ds [v] 0 10 20 30 40 c [pf] 100 1000 10000 100000 t [ms] 1 10 100 1000 10000 z th [k/w] 0.0 0.1 0.2 0.3 0.4 0.5 v sd [v] 0.2 0.4 0.6 0.8 1.0 1.2 i s [a] 0 100 200 300 400 500 f = 1 mhz c iss c oss c rss t j = 150c 125c 25c fig. 13 t yp. capacitances fig. 14 t yp. forward voltage drop of intrinsic diode fig. 15 t yp. transient thermal resistance per mosfet p h a s e - o u t
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